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Semiconductor Company, Toshiba Corporation | 論文
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Universal thermal activation process and current induced degradation on dielectric breakdown in HfSiO(N)
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- An HPSK/OFDM 64-QAM Dual-Mode Doherty Power Amplifier Module for Mobile Terminals(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- A 4-mm-Square Miniaturized Doherty Power Amplifier Module for W-CDMA Mobile Terminals(Analog Circuit Techniques and Related Topics)
- A 60-GHz Phase-Locked Loop with Inductor-Less Wide Operation Range Prescaler in 90-nm CMOS
- A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- A 2.4-GHz Temperature-Compensated CMOS LC-VCO for Low Frequency Drift Low-Power Direct-Modulation GFSK Transmitters(Analog, Low-Power LSI and Low-Power IP)
- Scalable Parasitic Components Model of CMOS for RF Circuit Design
- A 38% Tuning Range 6-GHz Fully Integrated VCO(Special Issue on High-Performance Analog Integrated Circuits)
- Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
- 60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates (Special Issue on Microwave and Millimeter Wave Technology)
- The States of Surface-Stabilized Ferroelectric Liquid Crystal with High-Pretilt Aligning Film
- A Low-Noise Amplifier using Variable Degeneration Inductance
- A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs(Analog Circuits and Related SoC Integration Technologies)
- Low k_1 Contact Hole Formation by Double Line and Space Formation Method with Contact Hole Mask and Dipole Illumination
- Characterization of 45nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool
- Lyapunov Exponents and Correlation Dimension of Field Lines of Collapsed Magnetic Surfaces