An HPSK/OFDM 64-QAM Dual-Mode Doherty Power Amplifier Module for Mobile Terminals(Active Devices/Circuits,<Special Section>Microwave and Millimeter-Wave Technology)
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概要
- 論文の詳細を見る
This paper presents a miniaturized dual-mode Doherty PA module applicable for an HPSK signal and an OFDM 64-QAM signal. Dual-mode operation with identical hardware is realized by introducing a bias switching technique, which changes bias conditions of amplifiers according to transmission signals, and employing dual-mode matching circuits, which are designed based on the results of load-pull measurements using an HPSK signal and an OFDM 64-QAM signal. The Doherty PA module consists of a Doherty stage and a gain stage. Two GaAs-HBTs for a Doherty stage and one GaAs-HBT for a gain stage are integrated onto a 1mm-square single GaAs-MMIC. In the HPSK mode, maximum output power of 26.7dBm, power added efficiency (PAE) of 41%, and power gain of 27dB are obtained in the condition that adjacent channel leakage power ratio (ACLR) is under -38dBc. In the OFDM 64-QAM mode, maximum output power of 21.0dBm, PAE of 27%, and power gain of 28dB are obtained under EVM<3.0%. This is the first multi-mode Doherty PA module suitable for multi peak to average power ratio (PAPR) signals.
- 社団法人電子情報通信学会の論文
- 2007-09-01
著者
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YOSHIDA Hiroshi
Corporate Research & Development Center, Toshiba Corp.
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Kato Takayuki
Corporate Research & Development Center Toshiba Corporation
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YAMAGUCHI Keiichi
Corporate Research & Development Center, Toshiba Corporation
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KURIYAMA Yasuhiko
Semiconductor Company, Toshiba Corporation
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Yamaguchi Keiichi
Corporate Research & Development Center Toshiba Corporation
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Kuriyama Yasuhiko
Semiconductor Company Toshiba Corporation
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Yoshida Hiroshi
Corporate Research & Development Center Toshiba Corporation
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YAMAGUCHI Keiichi
Corporate R&D Center, Toshiba Corporation
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YOSHIDA Hiroshi
Corporate Research & Development Center, Toshiba Corporation
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