Low k_1 Contact Hole Formation by Double Line and Space Formation Method with Contact Hole Mask and Dipole Illumination

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-06-30

著者

• Mimotogi Shoji

  Semiconductor Company Toshiba Corporation

• Inoue Soichi

  Semiconductor Company Toshiba Corporation

• NAKAMURA Hiroko

  Semiconductor Company, Toshiba Corporation

• SATO Kazuya

  Semiconductor Company, Toshiba Corporation

• TANAKA Satoshi

  Semiconductor Company, Toshiba Corporation

• TANIGUCHI Yasuyuki

  Semiconductor Company, Toshiba Corporation

• ABE Junko

  Semiconductor Company, Toshiba Corporation

関連論文

• Low k_1 Contact Hole Formation by Double Line and Space Formation Method with Contact Hole Mask and Dipole Illumination
• Characterization of 45nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool
• Characterization of 45 nm Attenuated Phase Shift Mask Lithography with a Hyper Numerical Aperture ArF Tool
• Low $k_{1}$ Contact Hole Formation by Double Line and Space Formation Method with Contact Hole Mask and Dipole Illumination

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