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Semiconductor Academic Research Center | 論文
- Atomic Migration of Metals in the Interfaces of Au-Si and Ni-Si for Crystalline and Amorphous Si Observed by 40 MeV-O^ Ion Backscattering
- Electro- and Thermomigration of Metallic Islands on Si(100) Surface
- Anger Electron Emission under Jon-Beam Shadowing Conditions
- Large-Area MOVPE Growth of AlGaAs/GaAs Heterostructures for HEMT LSIs
- MOVPE Growth of AlGaAs /GaAs Heterostructures for HEMT LSI
- Multi-Wafer Growth of HEMT LSI Quality AlGaAs/GaAs Heterostructures by MOCVD
- Mobility-Lifetime Product in Hydrogenated Amorphous Silicon
- Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators
- Direct Observation of a-Si:H/a-Si_C_x:H Multilayers and Their Electrical Properties : Surfaces, Interfaces and Films
- Preparation of High Purity a-Si:H Films and Their Light Soaking Effects
- Electron Irradiation Effects on Electrical Properties of a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
- Electron Irradiation Effects on a Bi_Pb_Sr_2Ca_2Cu_3O_ Superconductor
- Examination of Surface Elementary Reaction Model for Chemical Vapor Deposition of Al Using In Situ Infrared Reflection Absorption Spectroscopy : Teoretical Optimization Procedure (3)
- Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations : Theoretical Process Optimization Procedure(2)
- Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy : Theoretical Process Optimization Procedure(1)
- Short Cavity All-Solid-State Femtosecond Cr:LiSAF Laser
- Effect of Underlayers on the Morphology and Orientation of Aluminum Films Prepared by Chemical Vapor Deposition Using Dimethylaluminumhydride
- Transform-Limited 30-fs Pulse Generation from a Diode-Pumped Kerr-Lens Mode-Locked Cr:LiSAF Laser
- Compact Diode-Pumped Cr^3+:LiSrAlF_6 Femtosecond Laser
- Ion Irradiation Effect on Ba_2YCu_3O_7 Superconductor