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School of Electrical Engineering and Computer Science, Seoul National University, San 56-1, Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea | 論文
- Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- 4-bit FinFET SONOS flash memory: Optimization of structure and 3D numerical simulation (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
- Embedded Decoupling Capacitors up to 80 nF on Multichip Module-Deposited with Quasi-Three-Dimensional Metal–Insulator–Metal Structure
- High-Speed and Low-Power Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology
- High-Speed Digital Circuits Using InP-based Resonant Tunneling Diode and High Electron Mobility Transistor Heterostructure
- Extraction of Vertical, Lateral Locations and Energies of Hot-Electrons-Induced Traps through the Random Telegraph Noise
- Improving the Cell Characteristics Using SiN Liner at Active Edge in 4 Gbits NAND Flash Memories
- System-on-Package Platform with Thick Benzocyclobutene Layer for Millimeter-Wave Antenna Application (Special Issue : Solid State Devices and Materials (1))
- Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
- Monte Carlo Simulation of Single-Electron Nanocrystal Memories
- Highly Manufacturable and Reliable 80-nm Gate Twin Silicon–Oxide–Nitride–Oxide–Silicon Memory Transistor