スポンサーリンク
School of Electrical Engineering, Seoul National University | 論文
- Electrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates
- Time-Variant Fading Channel Estimation by Extended RLS(Wireless Communication Technology)
- In Vitro Immunoregulatory Effects of Korean Mistletoe Lectin on Functional Activation of Monocytic and Macrophage-Like Cells(Pharmacology)
- High Performance 0.1μm GaAs Pseudomorphic High Electron Mobility Transistors with Si Pulse-Doped Cap Layer for 77GHz Car Radar Applications
- Suppression of Current-Induced Degradation in Laser-Crystallized Polycrystalline Silicon Films by Adding Oxygen
- Accurate Extraction of Mobility, Effective Channel Length, and Source/Drain Resistance in 60nm MOSFETs
- The Space Charge Effect on the Discharge Current in Cross-Linked Polyethylene under High AC Voltages
- Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Degradation and Recovery Phenomena of Thin Gate Oxide Films under Dynamic Negative-Bias Temperature Instability (NBTI) Stress (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Preparation of (Ba, Sr)TiO_3 Thin Films with High Pyroelectric Coefficients at Ambient Temperatures
- Iterative Fourier Transform Algorithm with Adaptive Regularization Parameter Distribution for Optimal Design of Diffractive Optical Elements
- Diffractive Optical Element with Apodized Aperture for Shaping Vortex-Free Diffraction Image
- The effect of interface trap charges on poly-Si TFT
- The effect of interface trap charges on poly-Si TFT
- The Vertical Configuration of Antiferroelectric Liquid Crystal Display Mode (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- The Vertical Configuration of Antiferroelectric Liquid Crystal Display Mode
- Monolithic VCOs with High Q MEMS Inductors for RF Applications (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A New Junction Termination in Power Semiconductor Devices employing Trench