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School of Electrical Engineering, Seoul National University | 論文
- Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process
- A Comparison of Poly Silicon and Titanium Polycide for Field Emission Tip
- A Novel Micromachining Technique to Fabricate Released GaAs Microstructures with a Rectangular Cross Section
- Control of the Microstructure of (Pb, La) TiO_3 Thin Films by Metal-Organic Chemical Vapor Deposition Using a Solid Delivery System for Ferroelectric Domain Memory
- Precise Determination of Thermal Effect on the Optical Properties of Liquid Crystal Devices Using the Fabry-Perot Interferometry
- Passification of Non-square Linear Systems Using an Input-dimensional Dynamic Feedforward Compensator
- Surface Defect Inspection of Cold Rolled Strips with Features Based on Adaptive Wavelet Packets
- Packet Diversity in Wireless Uplink Channels(Wireless Communication Technologies)
- Synchronous Mirror Delay for Multi-phase Locking
- Synchronous Mirror Delay for Multi-phase Locking
- A Novel Bottom-Gate Poly-Si Thin Film Transistors with High ON/OFF Current Ratio
- Trench Insulated Gate Bipolar Transistor for the Improved Short Circuit Capability Employing Curved Junction and Wide Cell Pitch
- A New Voltage between Collector and Emitter (V_) Sensing Scheme for Short-Circuit Withstanding Capability of the Insulated Gate Bipolar Transistor
- A New Junction Termination in Power Semiconductor Devices employing Trench
- A New Lateral Dual-Gate Thyristor with Current Saturation
- A Novel SOI Carrier-Inducing Barrier-Controlled LIGBT with High Switching Speed
- Bipolar-Field-Effect-Transistor Hybrid-Mode Operation of Lateral Silicon-on-Insulator Bipolar Mode Field Effect Transistor with Improved Current Gain
- A Hybrid Lateral SOI BMFET with High Current Gain
- Simple Wide-Band Metal-Insulator-Metal (MIM) Capacitor Model for RF Applications and Effect of Substrate Grounded Shields
- Multi channel AlGaN/GaN HEMTs for high breakdown voltage and low leakage current