Simple Wide-Band Metal-Insulator-Metal (MIM) Capacitor Model for RF Applications and Effect of Substrate Grounded Shields

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• Lee Seung-wook

  Department Of Electrical Engineering And Computer Science Korea Advanced Institute Of Science And Te

• SHIN Hyungcheol

  School of Electrical Engineering, Seoul National University

• SONG Seong-Sik

  Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and T

• GIL Joonho

  Radio Pulse Inc.

関連論文

• 24GHz Low Noise Amplifier Design in 65nm CMOS Technology with Inter-Stage Matching Optimization(Session8B: High-Frequency, Photonic and Sensing Devices)
• Extraction of Trap Depth in Flash Cell Having Arch-Active Structure
• Spatial Distribution of Channel Thermal Noise in Short-Channel MOSFETs
• Improving the Cell Characteristics Using SiN Liner at Active Edge in 4G NAND Flash
• Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Establishing read operation bias schemes for 3-D pillar-structure flash memory devices to overcome paired cell interference (PCI) (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
• Simple Wide-Band Metal-Insulator-Metal (MIM) Capacitor Model for RF Applications and Effect of Substrate Grounded Shields
• 24GHz Low Noise Amplifier Design in 65nm CMOS Technology with Inter-Stage Matching Optimization(Session8B: High-Frequency, Photonic and Sensing Devices)
• Non-Quasi-Static Small-Signal Model of RF MOSFETs Valid up to 110GHz
• Simple Wide-Band Metal-Insulator-Metal (MIM) Capacitor Model for RF Applications and Effect of Substrate Grounded Shields

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