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School of Electrical Engineering, Seoul National University | 論文
- Remote Photocatalytic Oxidation Mediated by Active Oxygen Species Penetrating and Diffusing through Polymer Membrane over Surface Fluorinated TiO_2
- Progressive Coding of Binary Voxel Models Based on Pattern Code Representation(Digital Signal Processing)
- A New Trenched Source Power MOSFET Improving Avalanche Energy
- Pretilt Control of a Nematic Liquid Crystal on Polymer Layers by Atmospheric Plasma Irradiation
- Reduction of Sound Localization Error for Non-individualized HRTF by Directional Weighting Function(Engineering Acoustics)
- 30nm Triple-Gate In_GaAs HEMTs Fabricated by Damage-Free SiO_2/SiN_x Sidewall Process and BCB Planarization
- Dielectric Anomaly in Ferroelectric Liquid Crystals with Polarization Inversion
- Quasi-Achromatic and Wide Viewing Properties of a Reflective Liquid Crystal Display in In-Plane Optical Geometry
- Phase Diagram for Ferroelectric Nematic Ordering of Hard Spherocylinders with Longitudinal Dipoles
- A Low-Jitter Delay-Locked Loop with Harmonic-Lock Prevention
- A Novel Low Complexity Channel Estimator with Frequency Offset Resistance for CDMA(Wireless Communication Technologies)
- Isolation of 151 Mutants that Have Developmental Defects from T-DNA Tagging
- Anomalous Noise Degradation Caused by Device Size Effects in SOI MOSFETs
- Thermal maturity assessment of the Upper Triassic to Lower Jurassic Nampo Group, mid-west Korea : Reconstruction of thermal history
- Iron Loss Analysis of Interior Permanent Magnet Synchronous Machine Considering Driving Condition(Asia-Pacific Symposium on Applied Electromagnetics and Mechanics (APSAEM08))
- On the Bit Error Probability of 16DAPSK in a Frequency-Selective Fast Rayleigh Fading Channel with Cochannel Interference
- Phase Noise Enhancement of the GaAs High Electron Mobility Transistors Using Micromachined Cavity Resonators at Ka-band
- Active Channel Reservation for Coexistence Mechanism (ACROS) for IEEE 802.15.4 and IEEE 802.11
- A New Poly-Si Thin Film Transistors with Partial Amorphous Si Channel
- A New Gate-Overlapped LDD Poly-Si Thin Film Transistors