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School Of Electrical Engineeririg Seoul National University | 論文
- New Poly-Si TFT with Selectively Doped Region in the Active Layer(Special Issue on Electronic Displays)
- A New Recessed Gate-Line Employing Air-Gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD (情報ディスプレイ--The 6th Asian Symposium on Information Display & Exhibition)
- A New Recessed Gate-Line Employing Air-gap Gate-Data Line Inter-Crossover to Reduce Signal Delay for AMLCD
- New Excimer Laser Recrystallization of Poly-Si for Effective Grain Growth and Grain Boundary Arrangement
- New Thin Film Transistor with Poly-Si Active Layer Consisting of Enlarged Grain Structure
- Excimer-Laser-Induced In-Situ Fluorine Passivation Effects on Polycrystalline Silicon Thin Film Transistors
- Excimer-Laser-Induced Fluorine Passivation Effects on Electrical Characteristics and Stability of Poly-Si TFTs
- Characteristics of New Poly-Si Thin Transistor with a-Si Channel Region Near the Source/Drain
- Fabrication of Gate Overlapped-LDD poly-Si TFT for Large Area AMLCD
- New Poly-Si Thin Film Transistors with a-Si Channel Region Designed to Reduce the Leakage Current
- A Characteristics of Buried Channel Poly-Si TFTs
- In-Situ Fabrication of Gate Oxide and Poly-Si Film by XeCl Excimer Laser Annealing
- Excimer Laser Induced Crystallization of Polycrystalline Silicon Films by Adding Oxygen
- Pixel Design for TFT-LCD with Double Gate Poly-Si TFT and Double Layer Storage Capacitor
- Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- New Poly-Silicon TFT Partially Crystallized by Excimer Laser Irradiation through ITO Gate
- Insitu Fabrication of High Quality Oxide and Poly-Si Film by Excimer Laser Irradiation
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio