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Samsung Electronics Co. Ltd. Gyeonggi‐do Kor | 論文
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
- Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
- Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
- Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
- Structural and Electrical Properties of Lead-Zirconate-Titanate Thin Films Prepared by Multitarget Reactive DC Magnetron Cosputtering
- Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
- Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)
- Programming Characteristics of Phase Change Random Access Memory Using Phase Change Simulations
- Ge_2Sb_2Te_5 Confined Structures and Integration of 64Mb Phase-Change Random Access Memory
- Electro-Optical Properties of OCB Mode for Multi-Media Application(LCD Technology)(Electronic Displays)
- Electro-Optical Properties of OCB Mode for Multi-Media Application
- Known Postfix Based Cell Search Technique for OFDM Cellular Systems(Integrated Systems for Communications)
- Performance Evaluation of Uplink MC-CDMA Systems with Residual Frequency Offset(Wireless Communication Technologies)