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STMicroelectronics | 論文
- A Full Analytical Model to evaluate Strain Induced by CESL on MOSFET Performances
- Non Resonant Response to Terahertz Radiation by Submicron CMOS Transistors(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Analytical Model for Phonon-Limited Mobility in n-MOS Inversion Layers on Arbitrarily Oriented and Strained Si Surfaces
- Full-Wave Analysis of Power Distribution Networks in Printed Circuit Boards
- Novel High-Performance Analog Devices for Advanced Low-Power High-$k$ Metal Gate Complementary Metal--Oxide--Semiconductor Technology
- 直径10nmナノワイヤCMOSにおけるキャリア輸送に関する研究(IEDM特集(先端CMOSデバイス・プロセス技術))
- RFI Cancellation in DMT VDSL : A Digital Frequency Domain Scheme(Digital Signal Processing)
- Stress Engineering in Si Based Micro Structures Using Technology Computer-Aided Design(the IEEE International Conference on SISPAD '02)
- High Performance Shallow Trench Isolation for High Density Flash Memory Cells
- On the Improvement of Ferromagnetic Spiral Inductors with using High-Magnetization and High-Resistive FeHf-based Materials(Selected Papers from the Third International Workshop on High Frequency Micromagnetic Devices and Materials (MMDM3))
- Investigation of Proximity Effects in Ferromagnetic Inductors with Different Topologies : modeling and solutions(Selected Papers from the Third International Workshop on High Frequency Micromagnetic Devices and Materials (MMDM3))
- Evaluation of Exchange-Biased Magnetic Materials for High Density GHz Toroidal Integrated Inductors(Selected Papers from the Fourth International Workshop on High Frequency Micromagnetic Devices and Materials(MMDM4))
- Using Model for Assessment of Complementary Metal Oxide Semiconductor Technology and Roadmaps as a Pre-Simulation Program with Integrated Circuit Emphasis Model Generator for Early Technology and Circuit Simulation
- Mechanical and Electrical Analysis of Strained Liner Effect in 35 nm Fully Depleted Silicon-on-Insulator Devices with Ultra Thin Silicon Channels
- 65 nm Device Manufacture Using Shaped E-Beam Lithography
- High-K/Metal Gate MOSFETsにおける新しいレイアウト依存性(IEDM特集(先端CMOSデバイス・プロセス技術))
- High-K/Metal Gate MOSFETs における新しいレイアウト依存性
- Analytical Compact Model for Quantization in Undoped Double-Gate Metal Oxide Semiconductor Field Effect Transistors and Its Impact on Quasi-Ballistic Current