Stress Engineering in Si Based Micro Structures Using Technology Computer-Aided Design(<Special Issue>the IEEE International Conference on SISPAD '02)

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概要

• 論文の詳細を見る

• Nowadays, silicon technologies with feature sizes around 100nm are nsed in the microelectronics industry to produce gigabits integrated circuits. The prime part of numerical simulation in their development is now well established. One of the purpose of the numerical analyses is the improvement of the mechanical reliability. We synthetize in this paper various works we have performed on the macroscopical modeling and simulation of stress problems and their effects in silicon technologies.

• 社団法人電子情報通信学会の論文
• 2003-03-01

著者

• Carlotti Giovanni

  Inem And Dipartimento Di Fisica Dell Universita

• Wolf Ingrid

  Imecvzw

• SENEZ Vincent

  IEMN-ISEN

• ARMIGLIATO Aldo

  CNR-LMM

• CARNEVALE Gianpietro

  STMicroelectronics

• JAOUEN Herve

  STMicroelectronics-Central R&D

• Senez Vincent

  Iemn-isen:(present Address)institute Of Industrial Science University Of Tokyo

• Jaouen Herve

  Stmicroelectronics-central R&d

関連論文

• Stress Engineering in Si Based Micro Structures Using Technology Computer-Aided Design(the IEEE International Conference on SISPAD '02)
• 3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon (Special lssue on SISPAD'99)

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