3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon (Special lssue on SISPAD'99)

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概要

• 論文の詳細を見る

• This paper reports the implementation in three dimensions (3D) of diffusion models for low dose implanted dopants in silicon and the various numerical issues associated with it. In order to allow the end-users to choose between high accuracy or small calculation time, a conventional and 5-species diffusion models have been implemented in the 3D module DIFOX-3D belonging to the PROMPT plateform. By comparison with one and two-dimensional (1D and 2D) simulations performed with IMPACT-4, where calibrated models exist, the validity of this 3D models have been checked. Finally, the results obtained for a 3-dimensional simulation of a rapid thermal annealing step involved in the manufacturing of a MOS transistor are presented what show the capability of this module to handle the optimization of real devices.

• 一般社団法人電子情報通信学会の論文
• 2000-08-25

著者

• SENEZ Vincent

  IEMN-ISEN

• Senez V

  Iemn‐isen Villeneuve D'ascq Fra

• Hoffmann Thomas

  Iemn-isen Umr Cnrs

• Herbaux Jerome

  Iemn-isen Umr Cnrs

• Lampin Evelyne

  IEMN-ISEN, UMR CNRS

• Lampin Evelyne

  Iemn-isen Umr Cnrs

関連論文

• Stress Engineering in Si Based Micro Structures Using Technology Computer-Aided Design(the IEEE International Conference on SISPAD '02)
• 3-Dimensional Process Simulation of Thermal Annealing of Low Dose Implanted Dopants in Silicon (Special lssue on SISPAD'99)

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