スポンサーリンク
SONY Corporation Research Center | 論文
- A New Integrated Type Amorphous Si Solar Cell : III-4: AMORPHOUS SOLAR CELLS : Device Performances
- High Performance Bottom Gate TFTs by Excimer Laser Crystallization and Post Hydrogernation
- Radiation Annealing of GaAs Implanted with Si
- Analysis of GaN Damage Induced by Cl2/SiCl4/Ar Plasma
- High Density Charge Storage Memory with Scanning Probe Microscopy
- Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination
- Photopumped Blue Lasers with ZnSSe-ZnMgSSe Double Heterostructure and Attempt at Doping in ZnMgSSe
- Ti/Pt/Au Ohmic Contacts to n-Type ZnSe
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
- Carbon Microfibers Grown on Graphite Electrode During Fullerene Generation Using Composite Graphite Rods
- High Al-Content Visible (AlGa)As Multiple Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
- Primary production of phytoplankton in high Arctic Kongsfjorden, Svalbard (scientific paper)
- An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_As
- Forward and Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- An Improved Etched Buried Heterostructure Laser with Reduced Threshold Current : B-3: LASER
- Semi-Sealing Capless Anneal of GaAs
- Reverse Biased Electroluminescence in Alloyed ZnTe Diodes
- Near Infrared Absorption in P-Doped ZnTe Crystals
- Near Infrared Absorption in Phosphorus Doped P-Type ZnTe
- Friction Force Microscopy Study of the Langmuir-Blodgett Films with Different Molecular Structures