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SONY Corporation Research Center | 論文
- Fitting Analysis of TSCAP Spectrum
- The 〜100 meV Photoluminescence Peak in n-Type Al_xGa_As Grown by MOCVD
- DLTS Study of Cr Trap Density in Thermally Converted Semi-Insulating GaAs
- Antiferromagnetic Ordering in GdBa_2Cu_3O_y Superconductor
- Concentration Effects of Gadolinium to the Properties of Superconductor-YBa_2Cu_3O_y
- Energy Conversion Process of p-i-n Amorphous Si Solar Cells
- The Electronic Structure of One-Dimensional (1-D), 2-D, and 3-D Silicon Clusters
- Efficient Red LEDs of GaP by Vapor Phase Doping of Zinc
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors : I. Mn, (Cu, Al), (Ag, Al) and (Au, Al) Doped Phosphors
- Cathodoluminescence Saturation and Decay Characteristics of ZnS: Cu, Al Phosphor
- Concentration Dependence of Green-Cu Luminescence in ZnS : Cu, Al
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. : II. Al and Te Doped Phosphors
- Performance of AIN/GaN Heterostructure Metal Insulator Semiconductor Field Effect Transistor Based on Two-dimensional Monte Carlo Simulation
- Effects of Fluxes on Particle Growth of ZnS Phosphor
- Cathodoluminescent Properties of ZnS:Ce, Li Phosphor
- A High-power Tapered-SAN Laser for an Optical Pick-up : COMPONENTS
- Simulation of the Influence of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated Gate Heterostructure FETs
- Simulation of the Piezoelectric Effect on the Device Characteristics of AlGaN/GaN Insulated-Gate Heterostructure Field Effect Transistors
- Properties and Photovoltaic Characteristics of a-SiC : H Film : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
- Analysis of the Photovoltaic Characteristics of p-i-n a-Si Solar Cells : III-3: AMORPHOUS SOLAR CELLS (2) : Characterization
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