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Research and Development Center, TOSHIBA Corporation | 論文
- TS-33 Application of an Improved k-ε Turbulence Model to Predict the Compressible Viscous Flow Behavior in Turbomachinery Cascades(Session B-3: Advanced Numerical Analysis of Cascade)
- H210 Forced Convection Air Cooling Characteristics of Compact Plate Fins(Electronics cooling-3)
- Monolayer of Lithocholic Acid by Chemical Reaction on Silicon Crystal Surface
- Ionic Conductivities of β-and β"-Alumina Single Crystals
- Determination of Organic Crystal Orientation in Glass Capillaries by Microscopic Raman Spectroscopy
- Radial Force on the Impeller of a Centrifugal Pump
- Substrate Position Dependence of Characteristics of Te-C:H Film Prepared by DC Magnetron Sputtering in Methane Atmosphere ( Plasma Processing)
- High Efficiency Electroluminescence from Porous Silicon during Anodic Oxidation
- High-Efficiency InGaAlP Visible Light-Emitting Diodes
- Astigmatism in Ridge-Stripe InGaAlP Laser Diodes (SOLID STATE DEVICES AND MATERIALS 1)
- Rewritable Optical Head Using ± First-order Diffracted Beams of a Holographic Optical Element
- A Partial Response Maximum Likelihood Simulator to Evaluate the Effects of Various Deterioration Factors in Optical Disks
- Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
- Interface Study on GaAs-on-Si by Transmission Electron Microscopy : Surfaces, Interfaces and Films
- Composition Effect on CV Profile and Threshold Voltage for MESFETs Fabricated in Undoped LEC SI GaAs
- Preferential In-Water Oxidation around Defects in Undoped LEC Semi-Insulating GaAs Wafers
- Demonstration of Calcium Ion Distribution in Calcifying Cells : X-ray Microanalysis and Electron Spectroscopic Imaging after Fixation with NHA-Containing Fixative and Microwave Irradiation
- Metalorganic Chemical Vapor Deposition Study Using Tertiarybutylphosphine and Tertiarybutylarsine for InAlGaP Light-Emitting Diode Fabrication
- Metalorganic Chemical Vapor Deposition of AlGaAs Using Tertiarybuthylarsine
- 60-GHz-Band Monolithic HEMT Amplifiers Using BCB Thin Film Layers on GaAs Substrates (Special Issue on Microwave and Millimeter Wave Technology)