スポンサーリンク
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan | 論文
- Magnetoresistance Effect in Tunnel Junctions with Perpendicularly Magnetized $D$022-Mn3-\deltaGa Electrode and MgO Barrier
- Acoustic Wave Devices Composed of Periodically Poled $Z$-Cut LiTaO3 Plate Using Edge Reflection
- Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
- Development of Label-Free Bioaffinity Sensor Using a Lumped-Constant Microwave Resonator Probe
- High-Frequency Coherent Phonons in Graphene on Silicon
- An Intensity Modulator for Terahertz Electromagnetic Waves Utilizing Two-Dimensional Plasmon Resonance in a Dual-Grating-Gate High-Electron-Mobility Transistor
- Local Density of States of Partially Oxidized Ag(110) Surfaces Observed Using Scanning Tunneling Microscope Light-Emission Spectroscopy
- Observation of Polarization Distribution on Si(111) Surface by Scanning Nonlinear Dielectric Microscopy
- Mechanism of Prism-Coupled Scanning Tunneling Microscope Light Emission
- Theoretical Study of Population Inversion in Graphene under Pulse Excitation
- Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Polymer Material as a Gate Dielectric for Graphene Field-Effect-Transistor Applications
- Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
- Growth Rate Anomaly in Ultralow-Pressure Chemical Vapor Deposition of 3C-SiC on Si(001) Using Monomethylsilane
- Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Low-energy-electron-diffraction and X-ray-phototelectron-spectroscopy studies of graphitization of 3C-SiC(111) thin film on Si(111) substrate (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
- Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”
- Epitaxial Growth Processes of Graphene on Silicon Substrates
- Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition