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Quantum Nanoelectronics Research Center, Tokyo Institute of Technology | 論文
- Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition
- Low Threshold Current DR Laser with Wirelike Active Regions and Integration of EAM with High Electrical Isolation
- Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation
- Visible Electroluminescence from Spherical-Shaped Silicon Nanocrystals
- Synthesis of Assembled Nanocrystalline Si Dots Film by the Langmuir–Blodgett Technique
- Integration of Tunnel-Coupled Double Nanocrystalline Silicon Quantum Dots with a Multiple-Gate Single-Electron Transistor
- 27pHD-11 Spin-orbit interaction due to wavefunction penetration in low potential-barrier quatnum dots
- Size-Dependent Structural Characterization of Silicon Nanowires
- Study of charge quantization in individual silicon quantum dots using Kelvin Probe Force Microscopy
- Polarization Anisotropy of Spontaneous Emission Spectra in GaInAsP/InP Quantum-Wire Structures
- High $T_{0}$ Operation of 1590 nm GaInAsP/InP Quantum-Wire Distributed Feedback Lasers by Bragg Wavelength Detuning
- Bragg Wavelength Detuning in GaInAsP/InP Distributed Feedback Lasers with Wirelike Active Regions
- GaInAsP/InP distributed reflector laser with phase-shifted DFB and quantum-wire DBR sections