スポンサーリンク
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan | 論文
- Simulation Study of Charge Modulation in Coupled Quantum Dots in Silicon
- Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots
- Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C60
- Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate
- Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal--Oxide--Semiconductor Field-Effect Transistors
- Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding
- Scaling Analysis of Nanoelectromechanical Memory Devices
- Electromechanical Simulation of Switching Characteristics for Nanoelectromechanical Memory
- A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure (Special Issue : Solid State Devices and Materials (1))
- Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing
- 10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes
- Dual Function of Single Electron Transistor Coupled with Double Quantum Dot : Gating and Charge Sensing (Special Issue : Solid State Devices and Materials)