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Production Engineering Research Laboratory Hitachi Ltd. | 論文
- Influence of Deposition Conditions on Properties of a-SiGe:H Prepared by Microwave-Excited Plasma CVD : Condensed Matter
- Microwave-Excited Plasma CVD of a-Si:H Films Utilizing a Hydrogen Plasma Stream or by Direct Excitation of Silane
- Chemical Vapor Deposition of a-SiGe:H Films Utilizing a Microwave-Excited Plasma
- Chemical Vapor Deposition of a-Si:H Films Utilizing a Microwave Excited Ar Plasma Stream
- Production Mechanism of a Large-Diameter Uniform Electron Cyclotron Resonance Plasma Generated by a Circular TE_ Mode Microwave
- 8" Uniform Electron Cyclotron Resonance Plasma Source Using a Circular TE_ Mode Microwave
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- Study of YBa_2Cu_3 O_7 Superconductor by Low-Temperature Scanning Tunneling Microscopy and Spectroscopy
- Transient Light-Induced ESR Investigations of the Role of Hydrogen in the Stability of a-Si:H
- High-Quality p-Type μc-Si Films Prepared by the Solid Phase Crystallization Method
- Preparation and Properties of a-Si Films Deposited at a High Deposition Rate under a Magnetic Field
- Effect of crystallized phase on mechanical strength of hot-pressed composites of MgO-B_2O_3-Al_2O_3 type glass and Al_2O_3 filler
- OPT-K INTEGRATED OPTICAL SYSTEM FOR THERMALLY ASSISTED MAGNETIC RECORDING : TOWARD TERABIT-CLASS HDD(Optical Storage/Optical Devices for Storage I,Technical Program of Oral Presentations)
- Comparative Study of Certain Antibiotics on Epileptogenic Property, Including (1Rpi, 5S, 6S)-2-[(6,7-Dihydro-5H-pyrazolo[1,2-a] [1,2,4] triazolium-6-yl)] thio-6-[(R)-1-hydroxyethyl]-1-methyl-carbapenem-3-carboxylate (LJC10627), a Carbapenem Antibiotic wit
- High-Rate Deposition of a-Si:H Film with a Separated Plasma Triode Method
- Fine Particle Inspection Down to 38 nm on Bare Wafer with Micro Roughness by Side-Scattering Light Detection
- Atomic-Scale Structures of Top and Bottom Heterointerfaces in GaAs-Al_xGa_As (x=0.2-1) Quantum Wells Prepared by Molecular Beam Epitaxy with Growth Interruption
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam Epitaxy
- Structural Studies on the ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy III
- Structural Studies on ZrO_2-Y_2O_3 System by Electron Diffraction and Electron Microscopy I