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Production Engineering Research Laboratory Hitachi Ltd. | 論文
- Absolute Measurement of Lattice Spacing d(220) Silicon Crystal in Floating Zone
- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
- Sub-Nanometer Scale Measurements of Silicon Oxide Thickness by Spectroscopic Ellipsometry
- Development of Stable a-Si Solar Cells with Wide-Gap a-Si:H i-layers Deposited by an Inert Gas Plasma Treatment Method
- Improvement in a-Si:H Properties by Inert Gas Plasma Treatment
- Practical Simulation of the I-V Curve for Amorphous-Silicon-Based Multijunction Solar Cells after Light Soaking
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- Defects in Ion Implanted Hg_Cd_Te Probed by Monoenergetic Positron Beams
- Defects and Their Annealing Properties in B^+-Implanted Hg_Cd_Te Studied by Positron Annihilation
- Magnetic Shielding by Superconducting Y-Ba-Cu-O Prepared by the Modified Quench and Melt Growth (QMG) Process
- High Magnetic Flux Trapping by Melt-Grown YBaCuO Superconductors
- Effect of Pt Addition on Melt-Processed YBaCuO Superconductors
- Critical Current Characteristics in Superconducting Y-Ba-Cu-O Prepared by the Melt Process
- Intensity Variation of Transition Radiation Induced by Adsorption of Nitrogen on W(100) Surface
- Emission of Radiation Induced by Bombardment of Slow Electrons from a Clean (100) Surface of Tungsten
- Nonlinear Optical Properties of CdTe Microcrystallites in CaF_2 Thin Film
- Optical Properties of CdTe Microcrystallites in CaF_2
- Fine Structure of Porous Si with Visible Photoluminescence
- Reduction of Gap State Density in a-SiGe:H Alloys
- Gap States in a-SiGe:H Examined by the Constant Photocurrent Method