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Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd. | 論文
- Challenge to 0.13μm Device Patterning using KrF
- Challenge to 0.13μm Device Patterning using KrF
- Challenge to 0.13μm Device Patterning using KrF
- Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes
- Integration of Ferroelectric Random Access Memory Devices with Ir/IrO_2/Pb(Zr_xTi_)O^^_3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr_xTi_)O_3
- Enhanced Retention Characteristics of Pb(Zr, Ti)O_3 Capacitors by Ozone Treatment : Electrical Properties of Condensed Matter
- Performance and Reliability of MIM (Metal-Insulator-Metal) Capacitors with ZrO_2 for 50nm DRAM Application
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4 Gb DRAM Technologies(Session 7A Silicon Devices IV,AWAD2006)
- SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4 Gb DRAM Technologies(Session 7A Silicon Devices IV,AWAD2006)
- SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4Gb DRAM Technologies
- 3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- 3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
- Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- Risk-Adapted Preemptive Therapy for Cytomegalovirus Disease after Allogeneic Stem Cell Transplantation : A Single-Center Experience in Korea