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Paul-Drude-Institut fur Festkorperelektronik | 論文
- Surfaces and Interfaces of (Al, Ga) As Heterostructures on Unpatterned and Patterned GaAs Substrates
- Self-Oscillations of the Current in Doped Semiconductor Superlattices
- Atomic Hydrogen Induced Step Bunching on High-Index GaAs Substrates for Fabrication of Novel Quantum Wire and Quantum Dot Arrays by Molecular Beam Epitaxy
- New Challenges for Deltalike Confinement of Impurities in GaAs
- Nonuniform Reactive Ion Etching of MnAs/GaAs Heterostructures : MnAs Nanodots and GaAs Nanocolumns
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Induced by a DC Current
- Giant Surface Acoustic Wave Attenuation in the Quantum Hall Regime Inducedby a DC Current
- Nonuniversal Magnetic-Field Correlation of Conductance Fluctuations in Quantum Cavities Attached to a Superconductor : Condensed Matter: Electronic Properties, etc.
- Impurity-Induced Breakdown in GaAs with Partially Ordered Si-Doping
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices
- Low-Temperature-Grown GaAs-In Situ Characterization and Application
- Reduction of Remote Impurity Scattering in Heavy Modulation-Doped GaAs and (GaIn)As Quantum Wells with AlAs/GaAs Type-II-Superlattice Barriers
- Weak Antilocalization in Si δ-Doped In_xGa_As Systems
- Room Temperature Performance of (311) GaAs Quantum-Wire Structures
- A New Route to Reduce Remote Impurity Scattering in Modulation Doped Quantum Wells with Very High Conductivity
- Spin-Polarized Electron Injection through an Fe/InAs Junction
- Nanometer-Scale Characteriazation by Scanning Tuneling Microscopy
- Intrinsic Stress and Misfit Relaxation Ge/Si(001)
- High Carbon Doping of GaAs and AlAs in Distributed Bragg Reflectors
- Micro-Photoluminescence Study at Room Temperature of Sidewall Quantum Wires Formed on Patterned GaAs (311)A Substrates by Molecular Beam Epitaxy