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Ntt Lsi Lab. Kanagawa Jpn | 論文
- Degradation and Recovery of Metal-Oxide-Semiconductor (MOS) Devices Stressed with Fowler-Nordheim (FN) Gate Current
- InP-Based Ultrafast Resonant Tunneling High Electron Mobility Transistors(RTHEMTs) : Novel I-V Characteristics and Circuit Applications
- Reset-set flip-flop based on a novel approach to modulating resonant-tunneling current with FETs
- Amorphization from Quenched High-Pressure Phase at Low Temperatures and High Pressures in Semiconductors
- InP-Based High-Performance Monostable-Bistable Transistion Logic Element (MOBILE):an Intelligent Logic Gate Featuring Weighted-Sum Threshold Operations
- InP-Based High-Performance Monostable-Bistable Transition Logic elements (MOBILEs) Using Resonant-Tunneling Devices
- Overlay Repeatability in Mix-and-Match Exposure Using the SR Stepper: SS-1
- X-Ray Mask Inspection Using Replicated Resist Patterns
- Flux Creep in High J_c YBa_2Cu_3O_7 Crystals
- Magnetization of a YBa_2Cu_3O_7 Crystal Prepared by the Quench and Melt Growth Process
- Silicon Selective Epitaxial Growth over Thick SiO_2 Islands
- Facet Formation in Selective Silicon Epitaxial Growth
- Device Layer Transfer Technique using Chemi-Mechanical Polishing
- Crystalline Defects in Selectively Epitaxial Silicon Layers
- New Silylation Bi-layer Resist System Employing Photochemical Selective Resist Silylation
- A Solid State Electron Detector for the EB60 Electron Beam Lithography System