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New Industry Creation Hatchery Center Tohoku University | 論文
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- Anomalous random telegraph signal extractions from a very large number of n-metal oxide semiconductor field-effect transistors using test element groups with 0.47Hz-3.0MHZ sampling frequency (Special issue: Solid state devices and materials)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
- A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits
- A Genome-Wide View of the Escherichia coli BasS-BasR Two-component System Implicated in Iron-responses
- Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation
- Characterization of Zinc Oxide Films Grown by a Newly Developed Plasma Enhanced MOCVD Employing Microwave Excited High Density Plasma
- Damage-Free Microwave-Excited Plasma Contact Hole Etching without Carrier Deactivation at the Interface between Silicide and Heavily-Doped Si
- Reproducible Growth of Metalorganic Chemical Vapor Deposition Derived YBa_2Cu_3O_x Thin Films Using Ultrasonic Gas Concentration Analyzer
- In Situ Growth Monitoring During Metalorganic Chemical Vapor Deposition of YBa_2Cu_3O_x Thin Films by Spectroscopic Ellipsometry
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Influence of Interface Structure on Oxidation Rate of Silicon : Surfaces, Interfaces, and Films
- A nonlinear cepstral compensation method for noisy speech processing (第1回音声言語シンポジウム(SPLC))
- A nonlinear cepstral compensation method for noisy speech processing (第1回音声言語シンポジウム(SPLC))
- High-Speed Damage-Free Contact Hole Etching Using Dual Shower Head Microwave-Excited High-Density-Plasma Equipment
- Ferroelectric Sr_2(Ta_, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
- Ultrashallow and Low-Leakage p^+n Junction Formation by Plasma Immersion Ion Implantation (PIII) and Low-Temperature Post-Implantation Annealing