スポンサーリンク
New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai 980-8579, Japan | 論文
- Low frequency noise in Si(100) and Si(110) p-channel MOSFETs (シリコン材料・デバイス)
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance(Session 9B : Nano-Scale devices and Physics)
- Control of nitrogen profile in radical nitridation of SiO_2 films
- Tribological study for low shear force CMP process on damascene interconnects (シリコン材料・デバイス)
- Impact of fully depleted silicon-on-insulator accumulation-mode CMOS on Si(110) (シリコン材料・デバイス)
- Performance Comparison of Ultra-thin FD-SOI Inversion-, Intrinsic- and Accumulation-Mode MOSFETs
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced DRAM
- Data Analysis Technique of Atomic Force Microscopy for Atomically Flat Silicon Surfaces
- Low Contact Resistance with Low Schottky Barrier for N-type Silicon Using Yttrium Silicide
- Very Low Bit Error Rate in Flash Memory using Tunnel Dielectrics formed by Kr/O_2/NO Plasma Oxynitridation
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Statistical Analysis of Distributions of RTS Characteristics by Wide-Range Sampling Frequencies
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- A Material of Semiconductor Package with Low Dielectric Constant, Low Dielectric Loss and Flat Surface for High Frequency and Low Power Propagation(Session2: Silicon Devices I)
- The Evaluation of New Amorphous Hydrocarbon Film aCHx, for Copper Barrier Dielectric Film in Low-k Copper Metallization
- Low Dielectric Constant Non-Porous Fluorocarbon Films for Inter-Layer Dielectric
- A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits