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National Tsing Hua Univ. Hsinchu Twn | 論文
- Dynamic Testing of Phase Change Disk with Varied Dielectric Layer Thickness
- Enhanced Extreme Ultraviolet Lithography Mask Inspection Contrast Using Fabry-Perot Type Antireflective Coating
- Diluted Low Dielectric Constant Materials as Bottom Antireflective Coating Layers for both KrF and ArF Lithography Processes
- Thermal Flow and Chemical Shrink Techniques for Sub-100 nm Contact Hole Fabrication in Electron Beam Lithography
- Reduction Substrate Alkaline Contamination by Utilizing Multi-Layer Bottom Antireflective Coating Structures in ArF Lithography
- Low Dielectric Constant Polymer Materials as Bottom Antirefiective Coating Layers for both KrF and ArF Lithography
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- Chemical and Chemotaxonomical Studies of Filices. LIII. Chemical Studies on the Constituents of Dipteris conjugata REINW.
- Chemische und Chemotaxonomische Untersuchungen der Pterophyten. LII. Chemische Untersuchungen der Inhaltsstoffe von Scypholepia hookeriana J. SM.
- Chemical and Chemotaxonomical Studies on Filices. LI. Chemical Studies on the Constituents of Costa Rican Ferns. (3)
- Chemische und Chemotaxonomische Untersuchungen der Pterophyten. XLV. Chemische Untersuchungen der Inhaltsstoffe von Glaphyropteridopsis erubescens (WALL.) COPEL.
- Chemical and Chemotaxonomical Studies on Filices. XLIII. Chemical Studies on the Constituents of Lindsaea javanensis BL., L. japonica (BAK.) DIELS and Tapeinidium pinnatum (CAV.) C. CHR.
- Chemische und Chemotaxonomische Untersuchungen von Filices. XLI. Weitere Inhaltsstoffe von Pteris purpureorachis COPEL.
- Chemische und Chemotaxonomische Untersuchungen von Filices. XXXVIII. Chemische Untersuchungen der Inhaltsstoffe von Diplazium subsinuatum (WALL.) TAGAWA
- Characterizing Optical Properties of Self-Assembled Gold Nanoparticles for Surface Plasmon Resonance Device Applications
- Fabrication of Silicon and Germanium Nanostructures by Combination of Hydrogen Plasma Dry Etching and VLS Mechanism
- Natural Radiation Background in Metropolitan Taipei
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- ATM LAN Emulation for Mobile Cellular Networks