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Nano Device Research Center, Korea Institute of Science and Technology | 論文
- Magnetotransport in (Ga, Mn)N Ferromagnetic Semiconductors Grown by Plasma-Enhanced Molecular Beam Epitaxy
- Room Temperature Electron-Mediated Ferromagnetism in a Diluted Magnetic Semiconductor: (Ga,Mn)N
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Invited Self-Assembled Quantum Dots--Physics and Device Applications (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- Self-Assembled Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assemble Quantum Dots : Physics and Device Appications(Session A10 Nano-Materials and Quantum Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Self-Assembled Quantum Dots : Physics and Device Appications
- Self-Assembled Quantum Dots : Physics and Device Appications
- Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Characteristics of Thermally Treated Quantum-Dot Infrared Photodetector
- Enhanced Characteristics of In_Ga_As Quantum Dot Infrared Photo Detector with Hydrogen Plasma Treatment
- Study of Chirped Quantum Dot Superluminescent Diodes
- Characteristics of Superluminescent Diodes Utilizing In_Ga_As Quantum Dots
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Analytic Model for the Gate Current of MODFET's with and without Photonic Control
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Low-frequency noise characterizations of back-gate ZnO nanorod field-effect transistor structure (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers