Fabrication and characterization of a in-plane gate single electron tunneling transistor (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
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概要
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We report the fabrication and characterization of two different in-plane-gate transistors made from a GaAs/AlGaAs two-dimensional electron system. The first transistor is depletion mode and the second one is enhancement mode. These two modes are distinguished by the fabricated channel width. Transport measurements at room temperature (T) of these devices show the characteristics of depletion and enhancement mode of a field effect transistor. The drain current-gate bias (I_<DS>-V_<CG1>) measurements of both transistors at low temperature (T=4.2K) exhibit Coulomb oscillations. Moreover, I_<DS>-V_<CG1> characteristics of the enhancement mode device can be reproduced by double dot in series model.
- 社団法人電子情報通信学会の論文
- 2005-06-23
著者
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Hwang S
Dept. Of Electronics & Computer Engineering Korea University
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Park Y.
Nano Device Research Center Korea Institute Of Science And Technology
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YU Y.
Dept. of Information & Control Eng. and Graduate School of Bio-Environment & Information Technology,
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SON S.
Dept. of Electronics & Computer Engineering, Korea University
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HWANG S.
Dept. of Electronics & Computer Engineering, Korea University
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AHN D.
Institute of Quantum Information Processing and Systems, University of Seoul
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Cho K.
Electronics and Computer Engineering, Korea University
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Choi Y.
Dept. of Electronics & Computer Engineering, Korea University
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Cho K.
Dept. of Electronics & Computer Engineering, Korea University
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Lee J.
Nano Device Research Center, Korea Institute of Science and Technology
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Hwang S.
Dept. Of Electronic & Computer Eng. Korea Univ.
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Cho K.
Electronics And Computer Engineering Korea University
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Choi Y.
Dept. Of Electronic And Computer Engineering Korea University
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Ahn D.
Institute Of Quantum Information Processing And Systems University Of Seoul
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Lee J.
Nano Device Research Center Korea Institute Of Science And Technology
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Yu Y.
Dept. Of Information & Control Eng. And Graduate School Of Bio-environment & Information Tec
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Son S.
Dept. Of Electronics & Computer Engineering Korea University
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