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Nano Device Research Center, Korea Institute of Science and Technology | 論文
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- 1/f Noise in Large Grain Poly-Si TFT's (Devices:先端デバイスの基礎と応用に関するアジアワークショップ)
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure(Session A5 Compound Semiconductor Devices II)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Characteristics of InGaAsP/InGaAs MQW-LD with Asymmetric Separate Confinement Heterostructure
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- Low Frequency Excess Noise Modeling in Semiconductor Heterostructure Devices
- MAGNETIC AND TRANSPORT PROPERTIES OF Ge-TM THIN FILMS
- Optical Properties of Silicon Nanoparticles by Ultrasound-Induced Solution Method
- Characteristics of Superluminescent Diodes Utilizing In0.5Ga0.5As Quantum Dots