スポンサーリンク
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan | 論文
- Efficient Carrier-Envelope Offset Locking with a Simplified Configuration of an $f$-to-$2f$ Interferometer
- High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
- RF Performance of Diamond Metel–Semiconductor Field-Effect Transistor at Elevated Temperatures and Analysis of its Equivalent Circuit
- Novel Cost-Effective Photoreceiver Structure with Monolithically-Integrated Polymeric Waveguide Mirrors and Solder Bumps for Future 100-Gbit/s Class Receiver Modules
- High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
- 0.25-μm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure
- Responsivity Characteristics of InP/InGaAs Heterojunction Phototransistor with a Strained InAs/InGaAs Multiquantum Well Absorption Layer in the Base or Collector
- InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection
- InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 μm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer
- Mechanism of Superior Suppression Effect on Gate Current Leakage in Ultrathin Al2O3/Si3N4 Bilayer-Based AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors
- Efficient 2.7-μm Difference Frequency Generation Using Direct-Bonded Quasi-Phase-Matched LiNbO3 Ridge Waveguide and Investigation of O–H Absorption Influence
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Ultrahigh-Q Micromechanical Resonators by Using Epitaxially Induced Tensile Strain in GaNAs
- Effects of Growth Rate on Lateral Compositional Modulation of InGaAsP/InP(001) Grown by Metalorganic Molecular Beam Epitaxy
- Continuity-Equation Analysis of Hot Electron Base Transport in InP/InGaAs Heterojunction Bipolar Transistors