スポンサーリンク
NTT LSI laboratories | 論文
- Simulation of X-Ray Mask Pattern Displacement
- A New Proximity Parameter Evaluation Method Utilizing Auxiliary Patterns for Dose Compensation
- Evaluation of Electron Trap Levels in SOI Buried Oxides by Transient Photocurrent Spectroscopy
- Evaluation of Electron Trap Levels in SIMOX Buried Oxide by Transient Photocurrent Spectroscopy
- Vacancy-Type Defects in Be-Implanted InP
- A 100-kV, 100-A/cm^2 Electron Optical System for the EB-X3 X-Ray Mask Writer
- New Resist Technologies for 0.25-μm Wiring Pattern Fabrication with KrF Lithography
- Spatial Frequency Doubling Method by Image Superimposition for Sub-0.15-μm Optical Lithography
- Spatial Frequency Doubling Method for Sub-0.15-μm Optical Lithography
- Effect of Overcoats in Chemically Amplified Resists against Water and Organic Bases
- The Effect of an Organic Base in Chemically Amplified Resist on Patterning Characteristics Using KrF Lithography
- Metal-Free Acid Generators for Chemically Amplified Monodispersal Polyhydroxystyrene-Based Positive Resist and Post-Exposure Delay Problem
- Atomic Step Morphology of Epitaxially Grown and H_2 Annealed Si Surface
- Microstructure of Si Surface Epitaxially Grown in SiH_4-H_2 System
- Evaluation of Large-Area Mo/Si Multilayer Soft X-Ray Mirrors Fabricated by RF Magnetron Sputtering
- Low-power LSI Circuit Technologies for Portable Terminal Equipment
- Effects of Current Stress on the Characteristics of a Si Heterojunction Bipolar Transistor with a Hydrogenated Microcrystalline Si Emitter
- Impurity Diffusion in Silicon Based on the Pair Diffusion Model and Decrease in Quasi-Vacancy Formation Energy. Part One: Phosphorus
- External Electro-Optic Sampling Using Poled Polymers
- Preparation, Structures, and Physical Properties of Tetrakis(alkylthio)tetraselenafulvalene (TTC_n-TSeF, n=1-15)