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NTT LSI laboratories | 論文
- Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum
- Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
- GaAs Taper Etching by Mixture Gas Reactive Ion Etching System
- A 0.1μm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
- Analog VLSI Implementation of Adaptive Algorithms by an Extended Hebbian Synapse Circuit
- Deterministic Boltzmann Machine Learning Improved for Analog LSI Implementation (Special Issue on New Architecture LSIs)
- A Layout System for Mixed A/D Standard Cell LSI's
- Submicrometer Gold Interconnect Wiring by Sidewall Electroplating Technology
- High-Level VLSI Design Specification Validation Using Algorithmic Debugging (Special Section on VLSI Design and CAD Algorithms)
- Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
- Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
- Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
- Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
- Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
- Three-Dimensional Passive Elements for Compact GaAs MMICs (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
- Fabrication of Low Line Edge Roughness Mold for Photo-Nanoimprint
- Dielectric Constant of Silicon Dioxide Deposited by Atmospheric-Pressure Chemical Vapor Deposition Using Tetraethylorthosilicate and Ozone
- Simulation System for Resource Planning and Line Performance Evaluation of ASIC Manufacturing Lines (Special Issue on Scientific ULSI Manufacturing Technology)
- A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch
- Low-temperature growth of carbon nanotubes by grid-inserted plasma-enhanced chemical vapor deposition