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NTT Electronics Corp. | 論文
- Tight-Binding Calculation of Electronic Structures of InNAs Ordered Alloys
- Electronic Structure of GaP_N_x Alloys Determined Using Pseudopotentials and Gaussian Orbitals
- Electronic Structures of Wurtzite GaN, InN and Their Alloy Ga_In_xN Calculated by the Tight-Binding Method
- Valence-Band-Edge Energy of Group-III Nitride Alloy Semiconductors
- Spectral Change of Polymer Film Containing Poly(3-Alkylthiophene) with Temperature and Its Application as Optical Recording Media : Chemistry (incl. Physical process)
- High-Field Electron Transport in a-Si:H
- Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
- A Fully Depleted CMOS/SIMOX LSI Scheme Using a LVTTL-Compatible and Over-2,000-V ESD-Hardness I/O Circuit for Reduction in Active and Static Power Consumption (Special Issue on SOI Devices and Their Process Technologies)
- Doping Effect in Solution of Poly(3-Alkylthiophene)
- Absorption and Emission Spectral Changes in a Poly(3-Alkylthiophene) Solution with Solvent and Temperature
- Optical Properties of Solution of Polythiophene Derivatives as Functions of Alkyl Chain Length, Concentration and Temperature
- High-Field Electron Transport and Hot Electron Phenomena in Hydrogenated Amorphous Silicon Films
- Gate Oxide Defects in MOSLSIs and Octahedral Void Defects in Czochralski Silicon
- Direct Photochemical Vapor Deposition of Hydrogenated Amorphous Silicon : Effects of Excitation Wavelengths and Source Gases
- X7R Lead-Complex Perovskite Dielectrics with Inhomogeneous Compositional Distribution
- RBS/Channeling Study of the Crystallographic Correlation for Epitaxial CeO_2 on Si
- A 40-Gb/s 8×8 ATM Switch LSI Using 0.25-μm CMOS/SIMOX(Special Issue on Multimedia, Network, and DRAM LSIs)
- Shrinkage of Grown-in Defects in Czochralski Silicon During Thermal Annealing in Vacuum
- Observation of Shrinkage Process by Annealing of Grown-in Defect in Cz-Si Crystal
- 1.5 μm Range Tunable Twin-Guide Laser Fabricated by All MOVPE