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NTT Electronics Corp. | 論文
- Proposal of Source Supply Efficiency Analysis for InGaAsP Grown by MOVPE
- Thermochromism, Photochromism and Anomalous Temperature Dependence of Luminescence in Poly(3-Alkylthiophene) Film : Chemistry (incl. physical process)
- Fusibility of Polylhiophene Derivatives with Substituted Long Alkyl Chain and Their Properties
- Superconductivity of High T_c Thallium and Lead Cuprates with Layered Structure : I-A New Materials and Material Design : I. Oxide Superconductors, Experiments I : Material Syntheses and Crystal Structures
- Carbon in Grown-in Defects in Czoehralski Silicon and Its Influence on Gate-Oxide Defects
- Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon
- Octahedral Void Structure Observed in Grown-In Defects in the Bulk of Standard Czochralski-Si for MOS LSIs
- Octahedral Void Structure Observed at the Grown-In Defects in the Bulk of Standard CZ-Si for MOSLSIs
- A 2.6-Gbps/pin SIMOX-CMOS Low-Voltage-Swing Interface Circuit (Special Issue on Ultra-High-Speed LSIs)
- 3-Gb/s CMOS 1:4 MUX and DEMUX ICs
- A Low-Power and High-Speed Impulse-Transmission CMOS Interface Circuit
- Narrow Linewidth Characteristics in Tunable Twin-Guide Distributed Feedback Laser Diodes
- Theoretical Analysis of Wavelength Tuning and Power Variation for Complementary Twin-Active-Guide Lasers
- Tunable Laser Diode Having a Complementary Twin-Active-Guide (CTAG) Structure
- Dielectric Properties of Electron-Cyclotron-Resonance-Sputtered (Ba, Sr)TiO_3 Films
- Electron-Cyclotron-Resonance Sputtered SrTiO_3 Thin Films
- Four Types and Origins of Transient Si Wafer Deformation with Furnace Insertion and Withdrawal
- Two Kinds of Impurity-related Mark on Thermal Oxides Originating in Octahedral Void Defects
- Carbon in Grown-in Defects in Czochralski Silicon and Its Influence on Gate-Oxide Defects