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NTT Electrial Communication Laboratories | 論文
- Decomposition of Arsine and Trimethylarsenic on GaAs Investigated by Surface Photo-Absorption
- Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method
- Annealing Properties of Si-Atomic-Layer-Doped GaAs
- Optimal Growth Conditions of AlGaAs/GaAs Quantum Wells by Flow-Rate Modulation Epitaxy
- Thermal Annealing Effect of AlAs-GaAs Superlattice Grown at 300℃ by Migration-Enhanced Epitaxy : Condensed Matter
- Observation of Transient Behavior of GaAs MBE Growth by RHEED Oscillation
- Molecular Beam Epitaxial Growth of GaAs with Arsenic Molecules Transported by Hydrogen Gas
- Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation Epitaxy
- Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam
- Growth of GaAs on Preferentially Etched GaAs Surfaces by Migration-Enhanced Epitaxy : Condensed Matter
- Luminescence Characteristics from Gaussian Shaped Quantum Wells
- Optical Investigation on the Growth Process of GaAs during Migration-Enhanced Epitaxy
- Growth of ZnSe/GaAs Superlattices by Migration-Enhanced Epitaxy
- Lattice Vibration of Thin-Layered AlAs-GaAs Superlattices
- Surface Migration of Ga and Al Atoms on (100) GaAs and AlAs during Migration-Enhanced Epitaxy
- Growth Mechanism of GaAs during Migration-Enhanced Epitaxy at Low Growth Temperatures