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NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation | 論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays
- Effects of Substrate Materials on Properties of Superconducting Bi_2Sr_2CaCu_2O_8 Epitaxial Thin Films
- Interlayer Tunneling Spectroscopy and Evidence for the Evolution of a Pseudogap in Bi_2Sr_2CaCu_2O_8
- Improved Morphology and Surface Resistance of EuBa_2Cu_3O_ Thin Films on MgO Substrates Obtained by Intermittent Magnetron Sputter Deposition
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation : Semiconductors
- Effect of Oxidation-Induced Strain on Potential Profile in Si SETs Using Pattern-Dependent Oxidation (PADOX)
- Microscopic Mechanism of Oxygen Transport during Thermal Silicon Oxidation
- First-Principles Analyses of O_2 Molecules around Ultrathin SiO_2/Si(100) Interface
- Theoretical Study of Excess Si Emitted from Si-oxide/Si Interfaces
- Charge-Injection Effects in a Single 4,4''-Terphenyldithiol Molecule
- DC-Resistive-Heating-Induced Step Bunching on Vicinal Si (111)
- マイクロディスクアレイ電極によるフェムトモルオ-ダ-のアセチルコリンの検出
- 分子テンプレ-トで修飾した電極によるカテコ-ル,カテコ-ルアミン類の選択的検出
- Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy
- Effect of Nitrogen on Diffusion in Silicon Oxynitride
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2