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NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation | 論文
- Interfacial Silicon Emission in Dry Oxidation-the Effect of H and Cl
- Interfacial Silicon Emission in Dry Oxidation -the Effect of H and Cl
- Oxidation Simulation of Heavily Phosphorus-Doped Silicon based on the Interfacial Silicon Emission Model : Semiconductors
- The Effect of Chlorine on Silicon Oxidation : Simulation based on the Interfacial Silicon Emission Model
- Phenomenological Theory on Si Layer-by-Layer Oxidation with Small Interfacial Islands
- Oxidation Simulation of (111) and (100) Silicon Substrates Based on the Interfacial Silicon Emission Model
- Simulation of High-Pressure Oxidation of Silicon Based on the Interfacial Silicon Emission Model
- Unified Simulation of Silicon Oxidation Based on the Interfacial Silicon Emission Model
- Universal Theory of Si Oxidation Rate and Importance of Interfacial Si Emission
- Theoretical Study of Epitaxial Graphene Growth on SiC(0001) Surfaces
- TEM Moire Pattern and Scanning Auger Electron Microscope Analysis of Anomalous Si Incorporation into MBE-grown Ge on Si(111)
- Reflection High-Energy Electron Diffraction Studies of Vicinal Si(111) Surfaces
- 微小くし型電極における流れ系での電気化学的応答
- Real-Time Observation of (1×1)-(7×7) Phase Transition on Vicinal Si(111) Surfaces by Scanning Tunneling Microscopy
- New Superconducting Sr_2CuO_ Thin Films Prepared by Molecular Beam Epitaxy
- Contact Conductance Measurement of Locally Suspended Graphene on SiC
- Observation of Incomplete Surface Melting of Si Using Medium-Energy Ion Scattering Spectroscopy
- Patterning-Assisted Control for Ordered Arrangement of Atomic Steps on Si(111) Surfaces
- Growth of Twinned Epitaxial Layers on Si(111)√ × √-B Studied by Low-Energy Electron Microscopy
- Atomic Structure and Physical Properties of Epitaxial Graphene Islands Embedded in SiC(0001) Surfaces