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NTT Applied Electronics Laboratories | 論文
- Dislocation Reduction in GaAs on Si by Thermal Cycles and InGaAs/GaAs Strained-Layer Superlattices
- Erasing Characteristics and Crystallization Process of GeSbTe Phase-Change Optical Disk Media at Very Fast Linear Velocities
- STM Observation of Amorphous Marks in Phase Change Media : FUTURE TECHNOLOGY
- Crystallization of Amorphous Marks in SbTe Erasable Optical Storage Media : MEDIA
- Measurements of Flow Velocity and Temperature Profile in A Propane-Oxygen Combustion MHD Channel
- Plasma Temperature Profile in the Boundary Layers of an MHD Channel
- Material Quality in GaAs-on-Si Grown by Metalorganic Molecular Beam Epitaxy
- Domain Structures of As-Adsorbed Si(100) Surface and GaAs Overlayer
- Growth of GaAs on Si Substrates by Metalorganic MBE Using Triethylgallium and Arsenic
- RHEED Intensity Observation during TEGa-As_4 Alternate Supply Growth of GaAs : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Amplitude Dependence of the Lateral-Vibration Wear Test for Perpendicular Recording Magnetic Disks Treated by Heat Curing
- Lubricant Supply from Crystal Boundaries of Perpendicular Magnetic Disk Evaluated by Lateral Modulation Friction Force Microscopy
- P-MN-04 MICRO-TRIBOLOGICAL PROPERTIES OF HEAT TREATED HARD DISK EVALUATED BY FORCE MODULATION METHOD
- On-Board Antenna Pointing Mechanism for Multi-Beam Satellite Communications Systems
- Environmentally Robust Electret Condenser Microphone(Engineering Acoustics)
- Microwear of Silicon Surfaces
- Multi-quantum structures of GaAs/AlGaAs Free-standing Nanowires
- Nanoholes in InP and C60 Layers on GaAs Substrates by Using AlGaAs Nanowire Templates
- Initial Stages of Epitaxial Growth of GaP on Si with AsH_3 Preflow
- Growth and Characterization of GaAs layers Grown on Ge/Si Substrates by Metalorganic Chemical Vapor Deposition : Condensed matter