Erasing Characteristics and Crystallization Process of GeSbTe Phase-Change Optical Disk Media at Very Fast Linear Velocities
スポンサーリンク
概要
- 論文の詳細を見る
The erasing characteristics of phase-change optical disk media with a recording layer made of either Ge_2Sb_2Te_5 or Ge_<19>Sb_<25>Te_<56> alloys were investigated at very high linear velocities ranging from 10 m/s to 60 m/s. We used transmission electron microscope to observe incompletely erased marks, and used computer simulation to treat laser beam heating process in terms of time and temperature. Following results were obtained. (1) The crystallization times, in which the amorphous marks can be erased completely, for Ge_<19>Sb_<25>Te_<56> and Ge_2Sb_2Te_5 recording films are 55 ns and less than 33 ns respectively. (2) The erasing ratio of Ge_<19>Sb_<25>Te_<56> disk degrades at high linear velocity (higher than 40 m/s). (3) The erasing ratio degradation is caused by decreasing the number of crystals formed in the marks. (4) When the annealing time τ_<50> is less than 55 ns, nucleation process becomes bottleneck for crystallization of Ge_<19>Sb_<25>Te_<56> recording films, and the nucleation time for each grain in the marks is different from one another.
- 社団法人応用物理学会の論文
- 1993-02-15
著者
-
YAGI Shuhei
Department of Physical Electronics, Tokyo Institute of Technology
-
Yagi S
Department Of Physical Electronics Tokyo Institute Of Technology
-
Yagi Syuhei
Department Of Physical Electronics Tokyo Institute Of Technology
-
Yamazaki Hiroki
Ntt Applied Electronics Laboratories
-
YAMAZAKI Hiroki
NTT Interdisciplinary Research Laboratories
-
Yagi S
Meisei Univ. Tokyo Jpn
-
Yamazaki H
Japan Radio Co. Ltd.
-
Fujimori S
Ntt Interdisciplinary Laboratories
-
CHIBA Reiichi
NTT Telecommunications Service Department Technical Assistance & Support Center
-
YAGI Shougo
NTT Interdisciplinary Laboratories
-
FUJIMORI Susumu
NTT Interdisciplinary Laboratories
-
Chiba Reiichi
Ntt Telecommunications Service Department Technical Assistance & Support Center
関連論文
- Substitutional C Incorporation into Si_C_y Alloys Using Novel Carbon Source, 1, 3-Disilabutane
- Phosphorous Doping of Strain-Induced Si_C_y Epitaxial Films Grown by Low-Temperature Chemical Vapor Deposition
- P-Doping into Strain-Induced Si_C_y Epitaxial Films Grown by Low Temperature Chemical Vapor Deposition
- Epitaxial Growth of Si_C_y Film by Low Temperature Chemical vapor Deposition
- Two Adults Requiring Implantable Defibrillators Because of Ventricular Tachycardia and Left Ventricular Dysfunction Caused by Presumed Kawasaki Disease
- Characterization of Tensile Strained Si_1_yCy Alloy Grown by Photo- and Plasma Chemical Vapor Deposition at Very Low Temperature
- Theoretical Analysis of Photoacoustic Signal on PAS Using a Transparent Transducer : Photoacoustic Effect and Spectroscopy
- Consideration on PA Signals of Multilayer Structure Measured by PAS Using Transparent Transducer : Photoacoustic Spectroscopy
- Focusing Method in High-Impedance Material using Transmission Line Coupler : Ultrasonic Transmission Line Coupling Method
- Feasibility Study on High Data Transfer Rate of 300 Mbit / s with 8-Beam Laser Diode Array