スポンサーリンク
Musashino Electrical Communication Laboratory N.t.t. | 論文
- Resonant Tunneling Characteristic in InGaAs/InAlAs MQW Diodes with Si-Doped Quantum Wells
- Compositional Disordering of In_Ga_As/In_Al_As Multiquantum Well Structures by Repetitive Rapid Thermal Annealing
- Si-Induced Disordering of In_Ga_As / In_Al_As Multiquantum Well Structures : Semiconductors and Semiconductor Devices
- Effect of Argon Atmosphere on Self-Absorption of a Spectral Line in Laser Microprobe Analysis
- First Observation of Quantum Hall Effect in InP-MISFET : Semiconductors and Semiconductor Devices
- The Effect of Fe Concentration in Substrates on the Characteristics of InP MISFETs
- Current-Drift Suppressed InP MISFETs with New Gate Insulator
- Current Drift Phenomena and Spectroscopic Measurement Method for Insulator Trap Level Parameters in InP MISFETs
- Abnormality at the Interface of p-Type InP Grown by LPE
- 1.5μm InGaAsP/InP BH Lasers on p-Type InP Substrates
- InGaAsP n-Channel Inversion-Mode MISFET
- Improved Interface in Inversion-Type InP-MISFET by Vapor Etching Technique
- Slow Current-Drift Mechanism in n-Channel Inversion Type InP-MISFET
- Reduction of Interface States and Fabrication of p-Channel Inversion-Type InP-MISFET
- Sodium Contamination in SiO_2 Films Induced by Plasma Ashing
- A Single-Chip Speech Synthesizer for the PARCOR CODEC : A-4: LSI DEVICES
- InGaAs/InGaAsP Avalanche Photodiodes and Analysis of Internal Quantum Efficiency
- The Stability of Coating Film-Mirror Facet Interfaces of AlGaAs/GaAs DH Laser Diodes
- GaAs-AlGaAs DH Lasers with Buried Facet
- Accelerated Life Test of AlGaAs-GaAs DH Lasers