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Microelectronics Engineering Labs. Toshiba Corporation | 論文
- Charge Disproportionation in Highly One-Dimensional Molecular Conductor TPP[Co(Pc)(CN)_2]_2(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Giant Negative Magnetoresistance Reflecting Molecular Symmetry in Dicyano (phthalocyaninato) iron Compounds (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
- Contribution of Degenerate Molecular Orbitals to Molecular Orbital Angular Momentum in Molecular Magnet Fe(Pc)(CN)_2(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Fabrication of Micro-Marks for Electron-Beam Lithography
- Fabrication Process of Character Projection Mask for EB Lithography
- Anisotropic Thermal Diffusivity and Conductivity of YBCO(123) and YBCO(211) Mixed Crystals. II
- Anisotropic Thermal Diffusivity and Conductivity of YBCO(123) and YBCO(211) Mixed Crystals. I
- Simultaneous Measurement of Thermal Diffusivity and Conductivity Applied to Bi-2223 Ceramic Superconductors
- Highly Uniform Low-Pressure Chemical Vapor Deposition (LP-CVD) of Si_3N_4 Film on Tungsten for Advanced Low-Resistivity "Polymetal" Gate Interconnects
- Plasma-Damage-Free Gate Process Using Chemical Mechanical Polishing for 0.1 μm MOSFETs
- Plasma Damage Free Gate Process Using CMP for 0.1um MOSFETs
- Mechanism of Etch Stop in High Aspect-Ratio Contact Hole Etching
- Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method
- Lithography Simulator for Electon Beam/Deep UV Intra-Level Mix & Match
- Reliable High-k TiO_2 Gate Insulator Formed by Ultrathin TiN Deposition and Low Temperature Oxidation
- Highly Uniform Deposition of LP-CVD 3i3N4 Films on Tungsten for Advanced Low Resistivity "Poly-Metal" Gate Interconnects