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Matsushita Electric Industrial Co. | 論文
- Measurement of Diffusion Coefficient of CF_2 Radical in DC Pulsed CF_4/H_2 Discharge Plasma
- Measurements of Diffusion Coefficient of CF_2 Radical in DC Pulsed CF_4/O_2 Discharge Plasma ( Plasma Processing)
- FOREWORD (Special Section on Analog Technologies in Submicron Era)
- Thomson Scattering Diagnostics of an ECR Processing Plasma
- Influence of Deposition Conditions on the Properties of Silicon Nitride Films Prepared by the ECR Plasma CVD Method
- Effects of Fluorocarbon Films on CF Radical in CF_4/H_2 Plasma
- Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductuvely-Coupled Plasma
- Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma
- LOW-TEMPERATURE FORMATION OF poly-Si FILMS BY INDUCTIVELY-COUPLED SILANE PLASMA
- Reverse-Mode Single Ion Beam Induced Charge (R-mode SIBIC) Imaging for the Test of Total Dose Effects in n-ch Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)
- Low Temperature Growth of Amorphous and Polycrystalline Silicon Films from a Modified Inductively Coupled Plasma
- Lower-Temperature Growth of Hydrogenated Amorphous Silicon Films from Inductively Coupled Silane Plasma
- Simple Direct Monitoring of SiH_3 Radical and Particulates in a Silane Plasma with Ultraviolet Transmission Spectroscopy
- Cross Section Measurements for Electron-Impact Dissociation of CHF_3 into Neutral and Ionic Radicals
- Single-Event Upset Test of Static Random Access Memory Using Single-Ion Microprobe
- The Layered Composite Crystal Structure of the Ternary Sulfied, (SnS)_TaS_2 "SnTaS_3"
- Thermal Resistance and Electrornic Characteristics for High Electron Mobility Transistors Grown on Si and GaAs Substrates by Metal-Organic Chemical Vapor Deposition
- Measurements of Diffusion Coefficient of CF_2 Radical in DC Pulsed CF_4 Discharge Plasma
- The Layered Composite Crystal Structure of the Ternary Sulfide, (BiS)_TaS_2 "BiTaS_3"
- Site Dependence of Soft Errors Induced by Single-Ion Hitting in 64 kbit Static Random Access Memory (SRAM)