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Materials Department, University of California | 論文
- Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
- Fabrication of 10-Nanometer-scale GaAs Dot Structures by In Situ Selective Gas Etching with Self-Assembled InAs Dots as a Mask
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
- Optical Up-Conversion Processes in InAs Quantum Dots
- Excited-State Magnetoluminescence of InAs/GaAs Self-Assembled Quantum Dots
- Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
- Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
- Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
- Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4nm
- GaN-Based Integrated Lateral Thermoelectric Device for Micro-Power Generation
- Characterization of a-Plane GaN/(Al, Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO_2
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO_2 (110) and (101) Thin Films
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching