スポンサーリンク
Materials Department, University of California | 論文
- Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes : Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates
- Molecular-Dynamics-Based Profile Evolution Simulation for Sub-10-nm Si Processing Technology
- Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy
- Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
- Photochemistry of π-Complexes of Chlorine Atom with Methyl- and Ethyl-Substituted Benzenes
- Self Assembled Quantum Dots and Device Prospects
- 30-mW-Class High-Power and High-Efficiency Blue Semipolar (1011) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
- Critical Thickness for Onset of Plastic Relaxation in $(11\bar{2}2)$ and $(20\bar{2}1)$ Semipolar AlGaN Heterostructures
- Pulse Radiolysis-Laser Flash Photolysis Study of Xanthene in 1,2-Dichloroethane/Carbon Tetrachloride
- Quantum Yields of Intramolecular Hydrogen Abstraction Induced by Laser Flash Photolysis of Arene/Cl π-Complexes
- The Action of a Dietary Retinoid on Gene Expression and Cancer Induction in Electron-irradiated Rat Skin
- Propagation of Spontaneous Emission in Birefringent $m$-Axis Oriented Semipolar ($11\bar{2}2$) (Al,In,Ga)N Waveguide Structures
- Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
- Semipolar Single-Crystal ZnO Films Deposited by Low-Temperature Aqueous Solution Phase Epitaxy on GaN Light-Emitting Diodes
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes
- Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications