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Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University | 論文
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Temperature-Dependent Characteristics of an Sulfur-Passivated AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT)
- DC Characterization of InP/InGaAs Tunneling Emitter Bipolar Transistor
- Characteristics of an InGaAs/InGaAsP Composite-Collector Heterojunction Bipolar Transistor (CCHBT)
- A New Camel-Gate Field Effect Transistor with a Composite Channel Structure
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Hydrogen Sensing Characteristics of a Pd/AlGaN/GaN Schottky Diode
- Hydrogen-Sensing Behaviors of an InAlAs-Based Schottky Diode with a Pt Catalytic Thin Film
- Comparative Hydrogen-Sensing Study of Pd/GaAs and Pd/InP Metal-Oxide-Semiconductor Schottky DiodeS : Semiconductors
- S-Band 38dBm Power Amplifier Using PHEMT and FR4 Substrate
- Integration of 0.45-mm^2 On-Chip-Antenna (OCA) with High Output Power for 2.45GHz RFID Tag
- Temperature Dependence of Gate Current and Breakdown Behaviors in an n^+-GaAs/p^+ -InGaP/n^- -GaAs High-Barrier Gate Field-Effect Tranistor
- Multiple Switching Phenomena of AlGaAs/InGaAs/GaAs Heterostructure Transistors
- IN-PLANE SWITCHING液晶顯示器操作原理的分析與模擬
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
- Characteristics of a New Resistive-Type Hydrogen Sensor
- GaN Ultraviolet MSM Photodetectors by capping a Low-Temperature AlN Layer
- GaN Metal-Semiconductor-Metal Photodetectors with an un-activated Mg-doped GaN Cap Layer
- IN-PLANE SWITCHING液晶顯示器操作原理的分析與模擬