スポンサーリンク
Institute of Materials Science, The University of Tsukuba | 論文
- Characterization of Diamond Films by Means of a Pulsed Positron Beam
- Characterization of Diamond Films Synthesized on Si from a Gas Phase in Microwave Plasma by Slow Positrons
- 17pYA-3 Phase Diagram and Scaling Law in Bi2212 in H//ab
- 17aZB-6 Vortex Phase Transitions in a Single Crystal of Bi_2Sr_2CaCu_2O_ Studied by Simultaneous In-plane and Out-of-plane Resistivity Measurements
- 23pSC-10 Scaling of Vortex Lattice Melting Transition near ab-Plane in Bi_2Sr_2CaCu_2O_
- 22aZM-3 The penetration of Joseohson vortices into layered supercoductors
- Study on Momentum Density of Electrons and Fermi Surface in Niobium by Positron Annihilation
- Defect Production in Phosphorus Ion-Implanted SiO_2(43 nm)/Si Studied by a Variable-Energy Positron Beam
- Vacancy-Type Defects in As^+-Implanted SiO_2(43 nm)/Si Proved with Slow Positrons
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Positron Annihilation in Proton Irradiated Czochralski-Grown Si
- Characterization of Separation-by-Implanted-Oxygen Wafers with Monoenergetic Positron Beams
- 12pZA-1 Comparative Study on Vortex Matter Phase Transitions under Tilted Magnetic Fields in Bi_2Sr_2CaCu_2O_(English Session)
- 17aZB-4 Elastic Response of Crossing Pancake and Josephson Vortex Lattice
- Defects in Metalorganic Chemical Vapor Deposition Epitaxy-Grown ZnSe Films on GaAs Investigated by Monoenergetic Positrons
- The Defect Characterization of Heavily Si-doped Molecular Beam Epitaxy-Grown GaAs by the Monoenergetic Positron Method
- Defects Introduced by MeV-Energy Ion Implantation into Si Probed by a Monoenergetic Positron Beam
- Variable-Energy Positron Studies of Vacancy-Type Defects in TiN Films on Si
- Amorphization Processes and Structural Relaxation in Ion Implanted Si
- Characterization of Column III Vacancies in Al_xGa_As/GaAs Heterostructures Grown by Molecular Beam Epitaxy through Slow Positrons