スポンサーリンク
Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University | 論文
- On the Emitter Ledge Length Effect for InGaP/GaAs Heterojunction Bipolar Transistors
- Characteristics of a New Resistive-Type Hydrogen Sensor
- IN-PLANE SWITCHING液晶顯示器操作原理的分析與模擬
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Electric Field Effect on ZnSe Thin Films Prepared by Metalorganic Chemical Vapor Deposition
- Current Density-Voltage Characteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phosphor Interfaces
- Effects of Insulating Layers and Active Layer on ZnS:Tb, F Thin-Film Electroluminescent Devices
- Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
- Temperature-Dependent Characteristics of the Inverted Delta-Doped V-Shaped InGaP/In_xGa_/GaAs Pseudomorphic Transistors
- Investigation of a Step-Doped-Channel Negative-Differential-Resistance Transistor
- Impact of An Indium Oxide/Indium-Tin Oxide Mixed Structure for GaN-Based Light-Emitting Diodes
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique
- Application of Doping-Superlattice Collector Structure for GaAs Bipolar Transistor
- Highly-Stable Thermal Characteristics of a High Electron-Mobility Transistor with a Novel In_Ga_As_N_(Sb) Dilute Channel
- Inductively Coupled Plasma Mesa Etched InGaN/GaN Light Emitting Diodes Using Cl_2/BCl_3/Ar Plasma
- A Configurable Common Filterbank Processor for Multi-Standard Audio Decoder(Digital Signal Processing)
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser