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Imec vzw | 論文
- "Mask Enhancer" Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249μm^2 Static Random Access Memory Contact Layer Fabrication
- Impact of Organic Contamination on Thin Gate Oxide Quality
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- スマートイメージセンサ用PROMの検討
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
- A Stereo Echo Canceler with Input Slides and Counter-Lateralization(Digital Signal Processing)
- DSP IMPLEMENTATION AND PERFORMANCE EVALUATION OF A STEREO ECHO CANCELER WITH PRE-PROCESSING
- A Static Model for Scratches Generated during Aluminum Chemical-Mechanical Polishing Process : Orbital Technology
- Molecular Beam Epitaxial Growth of Bulk AlAs_Sb_ and AlAs_Sb_/InAs Superlattices on Lattice-Matched InAs Substrates
- High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates
- Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
- The Relationship of the Silicon Surface Roughness and Gate Oxide Integrity in NH_4OH/H_2O_2 Mixtures
- A Stereo Echo Canceler with Correct Echo-Path Identification
- “Mask Enhancer” Technology on ArF Immersion Tool for 45-nm-Node Complementary Metal Oxide Semiconductor with 0.249 μm2 Static Random Access Memory Contact Layer Fabrication